參數(shù)資料
型號(hào): IRF8010
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 494K
代理商: IRF8010
Notes
c
through
h
are on page 8
www.irf.com
1
08/23/02
IRF8010
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
100V
R
DS(on)
max
15m
I
D
80A
h
PD - 94497
TO-220AB
Applications
z
High frequency DC-DC converters
z
UPS and Motor Control
Benefits
z
Low Gate-to-Drain Charge to Reduce
Switching Losses
z
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
z
Fully Characterized Avalanche Voltage
and Current
z
Typical R
DS(on)
= 12m
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
A
Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
W/°C
V
V
GS
dv/dt
T
J
T
STG
Peak Diode Recovery dv/dt
e
Operating Junction and
Storage Temperature Range
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Nm (lbfin)
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
Max.
0.57
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
-55 to + 175
300 (1.6mm from case )
1.1(10)
Max.
80
h
57
320
260
1.8
± 20
16
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