參數(shù)資料
型號(hào)： IRF7822
廠商： International Rectifier
元件分類(lèi)： DC/DC變換器
英文描述： Power MOSFET for DC-DC Converters
中文描述： 功率MOSFET用于DC - DC轉(zhuǎn)換器
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 71K
代理商： IRF7822
IRF7822
2
www.irf.com
Parameter
Min
Typ
Max
Units
Conditions
Diode Forward
Voltage*
V
SD
1.0
V
I
S
= 15A , V
GS
= 0V
Reverse Recovery
Charge
Q
rr
120
nC
di/dt
~
700A/μs
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
di/dt = 700A/μs
(with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Reverse Recovery
Charge (with Parallel
Schottky)
Q
rr(s)
108
nC
Source-Drain Rating & Characteristics
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400 μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board
Typ = measured - Q
oss
Typical values of R
(on) measured at V
GS
= 4.5V, Q
G
, Q
SW
and Q
OSS
measured at V
GS
= 5.0V, I
F
= 15A.
Parameter
Drain-to-Source
Breakdown Voltage
Min
30
Typ
–
Max
–
Units
V
Conditions
V
GS
= 0V, I
D
= 250μA
BV
DSS
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
R
DS
(on)
5.0
6.5
m
V
GS
= 4.5V, I
D
= 15A
V
GS(th)
I
DSS
1.0
V
V
DS
= V
GS
,I
D
= 250μA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0,
Tj = 100
°
C
V
GS
= ±12V
30
150
μA
Gate-Source Leakage
Current
Total Gate Chg Cont FET
I
GSS
±100
nA
Q
G
Q
G
Q
GS1
44
60
V
GS
=5.0V, I
D
=15A, V
DS
=16V
V
GS
= 5.0V, V
DS
< 100mV
V
DS
= 16V, I
D
= 15A
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
38
13
Post-Vth
Gate-Source Charge
Q
GS2
3.0
nC
Gate to Drain Charge
Switch Chg(Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-on Delay Time
Q
GD
Q
sw
Q
oss
R
G
t
d (on)
t
r
t
d
(off)
t
f
C
iss
C
oss
9.0
12
27
1.5
15
V
DS
= 16V, V
GS
= 0
V
DD
= 16V, I
D
= 15A
ns V
GS
= 5.0V
Clamped Inductive Load
Rise Time
Turn-off Delay Time
5.5
22
Fall Time
Input Capacitance
12
5500
–
–
Output Capacitance
Reverse Transfer Capacitance C
rss
–
–
1000
300
–
–
pF
V
DS
= 16V, V
GS
= 0
Electrical Characteristics
Current
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7822 制造商:International Rectifier 功能描述:MOSFET N SO-8
IRF7822.PBF 制造商:International Rectifier 功能描述:MOSFET N SO-8
IRF7822HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 18A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 18A 8SOIC - Rail/Tube
IRF7822PBF 功能描述:MOSFET 30V 1 N-CH HEXFET 6.5mOhms 44nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7822TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R
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