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參數資料
| 型號： | IRF7809A |
| 廠商： | International Rectifier |
| 元件分類： | DC/DC變換器 |
| 英文描述： | Chipset for DC-DC Converters |
| 中文描述： | 芯片組的DC - DC轉換器 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 128K |
| 代理商： | IRF7809A |
www.irf.com
1
IRF7809A/IRF7811A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
Symbol
V
DS
V
GS
I
D
IRF7809A
30
IRF7811A
28
Units
V
±12
T
A
= 25°C
T
L
= 90°C
14.5
14.2
100
11.4
11.2
100
A
I
DM
P
D
T
A
= 25°C
T
L
= 90°C
2.5
2.4
W
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
T
J
,
T
STG
I
S
I
SM
–55 to 150
°C
A
2.5
50
2.5
50
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
Description
These new devices employ advanced HEXFET
Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
Both the IRF7809A and IRF7811A have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including R
, gate charge
and Cdv/dt-induced turn-on immunity. The IRF7809A offers
particulary low R
and high Cdv/dt immunity for
synchronous FET applications. The IRF7811A offers an
extremely low combination of Q
sw
& R
DS(on)
for reduced
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
HEXFET
Chipset for DC-DC Converters
IRF7809A
30V
8.5 m
73 nC
22.5 nC
30 nC
IRF7811A
28V
12 m
23 nC
7 nC
31 nC
V
DS
R
DS
(on)
Q
G
Q
sw
Q
oss
Absolute Maximum Ratings
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Max.
50
25
Units
°C/W
°C/W
R
θ
JA
R
θ
JL
Thermal Resistance
DEVICE RATINGS
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
01/19/00
PROVISIONAL DATASHEET
PD - 93810
PD - 93811
相關PDF資料 |
PDF描述 |
|---|---|
| IRF7811A | Chipset for DC-DC Converters |
| IRF7811AV | N-Channel Application-Specific MOSFETs |
| IRF7811W | Power MOSFET for DC-DC Converters |
| IRF7822 | Power MOSFET for DC-DC Converters |
| IRF8010 | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7809ATR | 功能描述:MOSFET N-CH 30V 14.5A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7809AV | 功能描述:MOSFET N-CH 30V 13.3A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7809AVHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC |
| IRF7809AVPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7809AVTRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 13.3A 8SOIC - Tape and Reel |
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