- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385443 > IRF7474PBF (International Rectifier) HEXFET㈢Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRF7474PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 146K |
| 代理商： | IRF7474PBF |
IRF7474PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
8
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 14mH
R
G
= 25
, I
AS
= 2.7A.
Pulse width
≤
400μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
I
SD
≤
2.7A, di/dt
≤
210A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
09/04
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7474 | HEXFET Power MOSFET |
| IRF7475PBF | HEXFET Power MOSFET |
| IRF7476 | Power MOSFET(Vdss=12V, Id=15A) |
| IRF7478QPBF | SMPS MOSFET |
| IRF7484PBF | HEXFET㈢ Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7474TRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7475 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET Selection for Non-Isolated DC/DC Converters |
| IRF7475PBF | 功能描述:MOSFET 12V 1 N-CH HEXFET 15mOhms 13nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7475TRPBF | 功能描述:MOSFET MOSFT 12V 11A 15mOhm 13nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7476 | 功能描述:MOSFET N-CH 12V 15A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。