參數(shù)資料
型號： IRF7379IPBF
廠商： International Rectifier
英文描述： HEXFET㈢ Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁數(shù)： 2/10頁
文件大?。?/td> 212K
代理商： IRF7379IPBF
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Notes:
N-Channel I
SD
≤
2.4A, di/dt
≤
73A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-1.8A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Parameter
Min. Typ. Max. Units
30
—
P-Ch -30
—
N-Ch
—
0.032
P-Ch
— -0.037 —
—
0.038 0.045
—
0.055 0.075
—
0.070 0.090
—
0.130 0.180
N-Ch 1.0
—
P-Ch -1.0
—
N-Ch 5.2
—
P-Ch 2.5
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-P
––
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
6.8
P-Ch
—
11
N-Ch
—
21
P-Ch
—
17
N-Ch
—
22
P-Ch
—
25
N-Ch
—
7.7
P-Ch
—
18
N-P
—
4.0
N-P
—
6.0
N-Ch
—
520
P-Ch
—
440
N-Ch
—
180
P-Ch
—
200
N-Ch
—
72
P-Ch
—
93
Conditions
N-Ch
—
—
—
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 4.9A
V
GS
= -10V, I
D
=- 4.3A
V
GS
= -4.5V, I
D
=- 3.7A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 15V, I
D
= 2.4A
V
DS
= -24V, I
D
= -1.8A
V
DS
= 24 V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
= 24 V, V
GS
= 0V, T
J
= 125°C
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= ± 20V
—
—
—
—
1.0
-1.0
25
-25
±100
25
25
2.9
2.9
7.9
9.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
GSS
Q
g
Gate-to-Source Forward Leakage
L
D
L
S
C
iss
Internal Drain Inductace
Internal Source Inductance
Between lead, 6mm (0.25in.) from
package and center of die contact
Parameter
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
47
—
53
—
56
—
66
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
3.1
-3.1
46
-34
1.0
-1.0
71
80
84
99
T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
N-Channel
T
= 25°C, I
F
= 2.4A, di/dt = 100A/μs
P-Channel
T
J
= 25°C, I
F
= -1.8A, di/dt = -100A/μs
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
N-Channel
I
D
= 2.4A, V
DS
= 24V, V
GS
= 10V
P-Channel
I
D
= -1.8A, V
DS
= -24V, V
GS
= -10V
N-Channel
V
DD
= 15V, I
D
= 2.4A, R
G
= 6.0
,
R
D
= 6.2
P-Channel
V
DD
= -15V, I
D
= -1.8A, R
G
= 6.0
R
D
= 8.2
N-Channel
V
GS
= 0V, V
DS
= 25V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -25V, = 1.0MHz
N-Ch
P-Ch
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Pulse width
≤
300μs; duty cycle
≤
2%
Surface mounted on FR-4 board,
≤
10sec.
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IRF7379PBF 功能描述:MOSFET 30V DUAL N / P CH 20V VGS MAX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7379PBF 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:2.5W
IRF7379QPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7379QTRPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7379TR 功能描述:MOSFET N+P 30V 4.3A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
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