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參數(shù)資料
| 型號： | IRF7341IPBF |
| 元件分類： | JFETs |
| 英文描述： | 4.7 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8, 8 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 138K |
| 代理商： | IRF7341IPBF |
HEXFET Power MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
07/07/06
Description
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
VDSS = 55V
RDS(on) = 0.050
IRF7341IPbF
www.irf.com
1
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
–––
62.5
°C/W
Thermal Resistance
D1
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Parameter
Max.
Units
VDS
Drain- Source Voltage
55
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
4.7
ID @ TC = 70°C
Continuous Drain Current, VGS @ 10V
3.8
A
IDM
Pulsed Drain Current
38
PD @TC = 25°C
Power Dissipation
2.0
PD @TC = 70°C
Power Dissipation
1.3
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 20
V
VGSM
Gate-to-Source Voltage Single Pulse tp<10s
30
V
EAS
Single Pulse Avalanche Energy
72
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
W
SO-8
PD-95087
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7341ITRPBF | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 4.7A 8SOIC - Tape and Reel |
| IRF7341PBF | 功能描述:MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7341Q | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC 制造商:International Rectifier 功能描述:MOSFET |
| IRF7341QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7341QTR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R |
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