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參數(shù)資料
| 型號(hào)： | IRFD014 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 1.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HVMDIP-4 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 2019K |
| 代理商： | IRFD014 |
Document Number: 91125
www.vishay.com
S10-2466-Rev. C, 25-Oct-10
1
Power MOSFET
IRFD014, SiHFD014
Vishay Siliconix
FEATURES
Dynamic dV/dt Rating
For Automatic Insertion
End Stackable
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = 1.7 A (see fig. 12).
c. ISD 10 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
60
RDS(on) ()VGS = 10 V
0.20
Qg (Max.) (nC)
11
Qgs (nC)
3.1
Qgd (nC)
5.8
Configuration
Single
N-Channel MOSFET
G
D
S
HVMDIP
D
S
G
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
HVMDIP
Lead (Pb)-free
IRFD014PbF
SiHFD014-E3
SnPb
IRFD014
SiHFD014
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TA = 25 °C
ID
1.7
A
TA = 100 °C
1.2
Pulsed Drain Currenta
IDM
14
Linear Derating Factor
0.0083
W/°C
Single Pulse Avalanche Energyb
EAS
130
mJ
Maximum Power Dissipation
TA = 25 °C
PD
1.3
W
Peak Diode Recovery dV/dtc
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFD014_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFD014PBF | 功能描述:MOSFET N-Chan 60V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD015 | 制造商:INT 功能描述:IRFD010 IR |
| IRFD020 | 功能描述:MOSFET N-Chan 50V 2.4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD020PBF | 功能描述:MOSFET N-Chan 50V 2.4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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