參數(shù)資料
型號(hào)： IRF7319
廠商： International Rectifier
英文描述： HEXFET?? Power MOSFET
中文描述： 的HEXFET？？功率MOSFET
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 137K
代理商： IRF7319
IRF7319
Surface mounted on FR-4 board, t
≤
10sec.
Parameter
Min. Typ. Max. Units
N-Ch 30
—
P-Ch -30
—
N-Ch
— 0.022
P-Ch
— 0.022
— 0.0230.029
— 0.0320.046
— 0.0420.058
— 0.0760.098
N-Ch 1.0
—
P-Ch -1.0
—
N-Ch
—
14
P-Ch
—
7.7
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-P
––
—
N-Ch
—
22
P-Ch
—
23
N-Ch
—
2.6
P-Ch
—
3.8
N-Ch
—
6.4
P-Ch
—
5.9
N-Ch
—
8.1
P-Ch
—
13
N-Ch
—
8.9
P-Ch
—
13
N-Ch
—
26
P-Ch
—
34
N-Ch
—
17
P-Ch
—
32
N-Ch
—
650
P-Ch
—
710
N-Ch
—
320
P-Ch
—
380
N-Ch
—
130
P-Ch
—
180
Conditions
—
—
—
—
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 4.7A
V
GS
= -10V, I
D
= -4.9A
V
GS
= -4.5V, I
D
= -3.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 15V, I
D
= 5.8A
V
DS
= -15V, I
D
= -4.9A
V
DS
= 24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
V
DS
= -24V, V
GS
= 0V, T
J
= 55°C
V
GS
= ±20V
—
—
—
—
1.0
-1.0
25
-25
±100
33
34
3.9
5.7
9.6
8.9
12
19
13
20
39
51
26
48
—
—
—
—
—
—
I
GSS
Q
g
Gate-to-Source Forward Leakage
pF
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V/°C
V
S
μA
nC
ns
N-Channel
I
D
= 5.8A, V
DS
= 15V, V
GS
= 10V
P-Channel
I
D
= -4.9A, V
DS
= -15V, V
GS
= -10V
N-Channel
V
DD
= 15V, I
D
= 1.0A, R
G
= 6.0
,
R
D
= 15
P-Channel
V
DD
= -15V, I
D
= -1.0A, R
G
= 6.0
,
R
D
= 15
N-Channel
V
GS
= 0V, V
DS
= 25V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -25V, = 1.0MHz
N-Ch
P-Ch
Parameter
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
0.78
—
-0.78 -1.0
—
45
—
44
—
58
—
42
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2.5
-2.5
30
-30
1.0
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
S
= -1.7A, V
GS
= 0V
N-Channel
T
= 25°C, I
F
=1.7A, di/dt = 100A/μs
P-Channel
T
J
= 25°C, I
F
= -1.7A, di/dt = 100A/μs
68
66
87
63
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel I
SD
≤
4.0A, di/dt
≤
74A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-2.8A, di/dt
≤
150A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
N-Channel Starting T
J
= 25°C, L = 10mH R
G
= 25
, I
AS
= 4.0A. (See Figure 12)
P-Channel Starting T
J
= 25°C, L = 35mH R
G
= 25
, I
AS
= -2.8A.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
nA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7319HR 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC
IRF7319PBF 功能描述:MOSFET 20V DUAL N-CH HEXFET 58mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7319TR 制造商:International Rectifier 功能描述:MOSFET, DUAL N/P-CHANNEL, 30V, 6.5A, SO-8
IRF7319TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC T/R
IRF7319TRPBF 功能描述:MOSFET MOSFT DUAL N/PCh 30V 6.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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