- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384491 > IRF7319 (International Rectifier) HEXFET?? Power MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF7319 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET?? Power MOSFET |
| 中文描述： | 的HEXFET？？功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 137K |
| 代理商： | IRF7319 |
N-Channel
30
P-Channel
-30
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
± 20
T
A
= 25°C
T
A
= 70°C
6.5
5.2
30
2.5
-4.9
-3.9
-30
-2.5
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
I
DM
I
S
T
A
= 25°C
T
A
= 70°C
2.0
1.3
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
82
4.0
140
-2.8
mJ
A
mJ
V/ ns
0.20
5.0
-5.0
-55 to + 150 °C
PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1606A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Absolute Maximum Ratings
( T
A
= 25°C Unless Otherwise Noted)
9/15/97
SO-8
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Fully Avalanche Rated
IRF7319
Description
Thermal Resistance Ratings
Parameter
Symbol
R
θ
JA
Limit
62.5
Units
Maximum Junction-to-Ambient
°C/W
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
Symbol Maximum
Units
N-Ch P-Ch
V
DSS
30V
-30V
R
DS(on)
0.029
0.058
D1
N -C H AN N EL M OSF ET
1
P-C H ANN EL MO SFE T
D1
D2
D2
G 1
S2
G 2
S1
Top View
8
2
3
4
5
6
7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7321D2PBF | FETKY MOSFET & Schottky Diode |
| IRF7324D1 | FETKY MOSFET / Schottky Diode |
| IRF7324D1TR | FETKY MOSFET / Schottky Diode |
| IRF7325PBF | HEXFET Power MOSFET |
| IRF7326D2 | FETKY MOSFET / Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7319HR | 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC |
| IRF7319PBF | 功能描述:MOSFET 20V DUAL N-CH HEXFET 58mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7319TR | 制造商:International Rectifier 功能描述:MOSFET, DUAL N/P-CHANNEL, 30V, 6.5A, SO-8 |
| IRF7319TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC T/R |
| IRF7319TRPBF | 功能描述:MOSFET MOSFT DUAL N/PCh 30V 6.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。