參數(shù)資料
型號： IRF6611
廠商： International Rectifier
英文描述： DirectFET Power MOSFET
中文描述： DirectFET功率MOSFET
文件頁數(shù)： 3/9頁
文件大?。?/td> 248K
代理商： IRF6611
IRF6611
www.irf.com
3
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
h
Surface mounted on 1 in. square Cu board, steady state.
i
Used double sided cooling , mounting pad.
j
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
k
T
C
measured with thermocouple incontact with top (Drain) of part.
l
R
θ
is measured at
T
J
of approximately 90°C.
h
Surface mounted on 1 in. square Cu
board (still air).
j
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
i
Mounted to a PCB with a
thin gap filler and heat sink.
(still air)
Absolute Maximum Ratings
Parameter
Units
W
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Thermal Resistance
Power Dissipation
h
Power Dissipation
h
Power Dissipation
k
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Junction-to-Ambient
hl
Junction-to-Ambient
il
Junction-to-Ambient
jl
Junction-to-Case
kl
Junction-to-PCB Mounted
Linear Derating Factor
g
°C/W
W/°C
1.8
89
0.022
270
-40 to + 150
Max.
2.8
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
0.20
0.10
0.05
D = 0.50
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τ
i (sec)
2.575 0.000686
22.547 0.786140
19.884 28
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci
τ
i
/
Ri
Ci=
τ
i
/
Ri
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參數(shù)描述
IRF6611PBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET
IRF6611TR1 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6611TR1 制造商:International Rectifier 功能描述:MOSFET Transistor Power Dissipation:2.8W
IRF6611TR1PBF 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6611TR1PBF 制造商:International Rectifier 功能描述:MOSFET
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