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參數(shù)資料
| 型號(hào)： | IRF6611 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 248K |
| 代理商： | IRF6611 |
Power MOSFET
d
Typical values (unless otherwise specified)
Description
The IRF6611 combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET
TM
packaging to achieve the lowest
on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including R
, gate charge and Cdv/dt-induced turn on immunity. The IRF6611 offers particularly low R
DS(on)
and high Cdv/
dt immunity for synchronous FET applications
.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
h
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
h
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
k
I
DM
Pulsed Drain Current
e
E
AS
Single Pulse Avalanche Energy
f
I
AR
Avalanche Current
e
DirectFET
ISOMETRIC
MX
PD - 96978A
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
c
SQ
SX
ST
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Typical On-Resistance vs. Gate Voltage
z
Low Profile (<0.7 mm)
z
Dual Sided Cooling Compatible
c
z
Ultra Low Package Inductance
z
Optimized for High Frequency Switching above 1MHz
c
z
Ideal for CPU Core DC-DC Converters
z
Optimized for SyncFET Socket of Sync. Buck Converter
c
z
Low Conduction Losses
z
Compatible with Existing Surface Mount Techniques
c
c
Click on this section to link to the appropriate technical paper.
d
Click on this section to link to the DirectFET MOSFETs
e
Repetitive rating; pulse width limited by max. junction temperature.
f
Starting T
J
= 25°C, L = 0.91mH, R
G
= 25
, I
AS
= 22A.
h
Surface mounted on 1 in. square Cu board, steady state.
k
T
C
measured with thermocouple mounted to top (Drain) of part.
Notes:
MQ
MX
MT
V
DSS
30V max
Q
g tot
37nC
V
GS
R
DS(on)
2.0m
@ 10V
Q
gs2
3.3nC
R
DS(on)
2.6m
@ 4.5V
Q
oss
V
gs(th)
23nC
±20V max
Q
gd
12nC
Units
V
A
mJ
A
Max.
30
22
150
220
210
22
±20
27
Q
rr
16nC
1.7V
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
TS
)
ID = 27A
TJ = 25°C
TJ = 125°C
0
10
20
30
40
50
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
VG
VDS= 24V
VDS= 15V
ID= 22A
相關(guān)PDF資料 |
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|---|---|
| IRF6612 | HEXFET Power MOSFET |
| IRF6612TR1 | HEXFET Power MOSFET |
| IRF6614 | DirectFET Power MOSFET |
| IRF6617TR1 | HEXFET Power MOSFET |
| IRF6617 | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6611PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6611TR1 | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6611TR1 | 制造商:International Rectifier 功能描述:MOSFET Transistor Power Dissipation:2.8W |
| IRF6611TR1PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6611TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
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