參數(shù)資料
型號(hào)： IRF6608
廠商： International Rectifier
英文描述： lHEXFET Power MOSFET
中文描述： lHEXFET功率MOSFET
文件頁數(shù)： 2/8頁
文件大?。?/td> 178K
代理商： IRF6608
2
www.irf.com
S
D
G
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of part.
R
θ
is measured at
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min.
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
29
–––
7.0
9.0
8.0
11
–––
3.0
-5.4
–––
–––
30
–––
100
–––
100
–––
-100
–––
–––
16
24
4.6
–––
1.4
–––
5.3
–––
4.7
–––
6.7
–––
11
–––
13
–––
12
–––
16
–––
3.4
–––
2120
–––
440
–––
260
–––
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
See Fig. 16
nC
ns
pF
Avalanche Characteristics
Parameter
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
–––
Typ. Max. Units
–––
13
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
100
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
t
rr
Q
rr
–––
–––
–––
0.94
31
33
1.2
47
50
V
ns
nC
–––
V
GS
= 4.5V
I
D
= 8.8A
Typ.
–––
–––
V
GS
= 0V
V
DS
= 15V
= 1.0MHz
I
D
= 8.8A
Clamped Inductive Load
54
8.8
0.21
T
J
= 25°C, I
F
= 8.8A
di/dt = 100A/μs
T
J
= 25°C, I
S
= 8.8A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
V
GS
= 4.5V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250μA
Max.
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
MOSFET symbol
V
DS
= 15V, I
D
= 8.8A
Conditions
V
DS
= 15V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
V
DS
= 15V
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.38mH
R
G
= 25
, I
AS
= 8.8A.
Pulse width
≤
400μs; duty cycle
≤
2%.
Surface mounted on 1 in. square Cu board.
相關(guān)PDF資料
PDF描述
IRF6611 DirectFET Power MOSFET
IRF6612 HEXFET Power MOSFET
IRF6612TR1 HEXFET Power MOSFET
IRF6614 DirectFET Power MOSFET
IRF6617TR1 HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6608TR1 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6609 功能描述:MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6609TR1 功能描述:MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6609TR1PBF 功能描述:MOSFET 20V N-CH HEXFET 2mOhms 46nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6609TR1PBF 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CH MOSFET, 20V, 25A, DIRECTFET MT
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*