參數(shù)資料
型號(hào): IRF6217
廠商: International Rectifier
英文描述: AC 6C 6#16S SKT PLUG
中文描述: HEXFET功率MOSFET的直流有源鉗位復(fù)位(復(fù)位開關(guān)直流轉(zhuǎn)換器)
文件頁數(shù): 2/8頁
文件大小: 105K
代理商: IRF6217
IRF6217
2
www.irf.com
Parameter
Min. Typ. Max. Units
0.55
–––
–––
6.0 9.0 I
D
= -0.42A
–––
1.6
2.4
–––
2.8
4.2
–––
12
–––
–––
7.2
–––
–––
14
–––
–––
16
–––
–––
150
–––
–––
30
–––
–––
10
–––
–––
150
–––
–––
15
–––
–––
45
–––
Conditions
V
DS
= -50V, I
D
= -0.42A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= -120V
V
GS
= -10V,
V
DD
= -75V
I
D
= -0.42A
R
G
= 6.2
V
GS
= -10V
V
GS
= 0V
V
DS
= -25V
= 1.0KHz
V
GS
= 0V, V
DS
= -1.0V,
= 1.0KHz
V
GS
= 0V, V
DS
= -120V,
= 1.0KHz
V
GS
= 0V, V
DS
= 0V to -120V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
Max.
15
-1.4
Units
mJ
A
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Avalanche Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= -0.42A, V
GS
= 0V
T
J
= 25
°
C, I
F
= -0.42A
di/dt = -100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
–––
–––
–––
–––
51
86
-1.6
77
130
V
ns
nC
Diode Characteristics
-1.8
-5.0
A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
-0.17
–––
V/
°
C Reference to 25
°
C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
-3.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Min. Typ. Max. Units
-150
–––
Conditions
V
GS
= 0V, I
D
= -250μA
–––
V
–––
–––
–––
–––
–––
–––
2.4
-5.0
-25
-250
-100
100
V
V
GS
= -10V, I
D
= -0.42A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -150V, V
GS
= 0V, T
J
= 25
°
C
V
DS
= -120V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= -20V
V
GS
= 20V
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
S
D
G
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