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參數(shù)資料
| 型號： | IRF620 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N溝道增強型功率MOS場效應(yīng)管) |
| 中文描述： | 5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 54K |
| 代理商： | IRF620 |
4-199
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2.0
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
10
1
I
D
,
100
100
DC
100
μ
s
10
μ
s
1ms
10ms
100ms
1
1000
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
OPERATION IN THIS AREA IS LIMITED BY r
DS(ON)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
0
20
40
60
80
2
4
6
8
10
100
7V
6V
5V
4V
10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
1
0
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
6
10
2
3
I
D
,
4
8
5
V
GS
= 10V
V
GS
= 4V
V
GS
= 5V
V
GS
= 6V
V
GS
= 8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
2
0
2
4
6
10
4
6
I
D
,
V
G
, GATE TO SOURCE VOLTAGE (V)
8
8
10
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
> I
D(ON)
x r
DS(ON) MAX
0
1.0
1.5
5
10
15
20
r
D
,
I
D
, DRAIN CURRENT (A)
0
0.5
V
GS
= 10V
V
GS
= 20V
O
)
N
2.2
1.4
1
0.6
0.2
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.8
80
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 2A
IRF620
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF620 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF620_R4941 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6201PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6201TRPBF | 功能描述:MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF620A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB |
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