參數(shù)資料
型號(hào): IRF520VSPBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 4/11頁(yè)
文件大?。?/td> 229K
代理商: IRF520VSPBF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
24
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
9.2A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
100
0.4
0.6
V ,Source-to-Drain Voltage (V)
0.8
1.0
1.2
1.4
1.6
I
S
V = 0 V
T = 25 C
°
T = 175 C
1
10
100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
ID
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
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