參數(shù)資料
型號(hào): IRF5210SPBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 1/10頁
文件大?。?/td> 707K
代理商: IRF5210SPBF
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from
IRF5210S/L
P-Channel
Lead-Free
S
D
G
www.irf.com
1
Absolute Maximum Ratings
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
W/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady state)
170
1.3
± 20
120
-23
0.017
-7.4
300 (1.6mm from case )
-55 to + 150
Max.
-38
-24
-140
3.1
D
2
Pak
IRF5210SPbF
TO-262
IRF5210LPbF
S
D
G
D
S
D
G
D
G
D
S
Gate
Drain
Source
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
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