參數(shù)資料
型號: IRF4104SPBF
廠商: International Rectifier
英文描述: HEXFET㈢ Power MOSFET
中文描述: ㈢的HEXFET功率MOSFET
文件頁數(shù): 6/13頁
文件大?。?/td> 334K
代理商: IRF4104SPBF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
GS
-75
-50
-25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
VG
ID = 250μA
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
0
100
200
300
400
500
EA
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