參數(shù)資料
型號: IRF2907ZLPbF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 4/12頁
文件大?。?/td> 796K
代理商: IRF2907ZLPBF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
50
100
150
200
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VG
VDS= 60V
VDS= 38V
VDS= 15V
ID= 90A
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
1
10
100
1000
IS
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
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