參數(shù)資料
型號： IRF2907ZLPbF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/12頁
文件大?。?/td> 796K
代理商： IRF2907ZLPBF
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L=0.095mH,
R
G
= 25
, I
AS
= 75A, V
GS
=10V.
Part not recommended for use above this value.
I
SD
≤
75A, di/dt
≤
340A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from
0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population.
100% tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is measured at
TO-220 device will have an Rth of 0.45°C/W.
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
75
–––
–––
2.0
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.069
–––
3.5
4.5
–––
4.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
180
270
46
–––
65
–––
19
–––
140
–––
97
–––
100
–––
5.0
–––
V
V/°C
m
V
S
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
nH
Between lead,
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
13
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Diode Characteristics
Parameter
I
S
Continuous Source Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
7500
970
510
3640
650
1020
–––
–––
–––
–––
–––
–––
pF
Min.
–––
Typ. Max. Units
–––
75
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
680
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
41
59
1.3
61
89
V
ns
nC
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 75A
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
T
J
= 25°C, I
F
= 75A, V
DD
= 38V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 60V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 10V
MOSFET symbol
Conditions
R
G
= 2.5
I
D
= 75A
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 75A
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相關代理商/技術參數(shù)
參數(shù)描述
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