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參數(shù)資料
| 型號(hào)： | IRF2807ZL |
| 廠商： | International Rectifier |
| 英文描述： | Advanced Process Technology |
| 中文描述： | 先進(jìn)的工藝技術(shù) |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 280K |
| 代理商： | IRF2807ZL |
www.irf.com
1
HEXFET
is a registered trademark of International Rectifier.
IRF2807Z
IRF2807ZS
IRF2807ZL
HEXFET
Power MOSFET
S
D
G
V
DSS
= 75V
R
DS(on)
= 9.4m
I
D
= 75A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
O
O
O
O
O
O
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D
2
Pak
IRF2807ZS
TO-220AB
IRF2807Z
TO-262
IRF2807ZL
Absolute Maximum Ratings
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
A
mJ
°C
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.90
–––
62
40
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Max.
89
63
75
350
170
10 lbfin (1.1Nm)
1.1
± 20
160
200
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
PD - 94659A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF2807ZS | Advanced Process Technology |
| IRF2807 | Power MOSFET(Vdss=75V, Id=82A) |
| IRF2903Z | HEXFET Power MOSFET |
| IRF2903ZL | HEXFET Power MOSFET |
| IRF2903ZS | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF2807ZLPBF | 功能描述:MOSFET MOSFT 75V 89A 9.4mOhm 71nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2807ZLPBF-EL | 制造商:International Rectifier 功能描述: |
| IRF2807ZPBF | 功能描述:MOSFET MOSFT 75V 89A 9.4mOhm 71nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2807ZS | 功能描述:MOSFET N-CH 75V 75A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF2807ZSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 89A 3-Pin(2+Tab) D2PAK |
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