參數(shù)資料
型號(hào): IRF1302S
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 20V的,的Rds(on)\u003d 4.0mohm,身份證\u003d 174A章)
文件頁數(shù): 4/11頁
文件大?。?/td> 229K
代理商: IRF1302S
IRF1302S/IRF1302L
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
20
40
60
80
100
0
2
5
7
10
12
Q , Total Gate Charge (nC)
V
G
I
=
D
104A
V
= 16V
DS
0.1
1
10
100
1000
0.2
0.7
1.2
1.7
2.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 175 C
T = 25 C
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
100000
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
ID
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
相關(guān)PDF資料
PDF描述
IRF1302STRL TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB
IRF1302STRR TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB
IRF1310NL Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
IRF1310NS Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
IRF1310N Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
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