參數(shù)資料
型號(hào): IMX29F002BTI-70
廠商: Macronix International Co., Ltd.
英文描述: 2M-BIT [256K x 8] CMOS FLASH MEMORY
中文描述: 200萬(wàn)位[256K × 8]的CMOS閃存
文件頁(yè)數(shù): 18/49頁(yè)
文件大?。?/td> 911K
代理商: IMX29F002BTI-70
18
REV. 1.1, JUN. 14, 2001
P/N: PM0547
MX29F002/002N
AC CHARACTERISTICS
29F002T/B-55
29F002T/B-70
SYMBOL
tACC
tCE
tOE
tDF
tOH
PARAMETER
Address to Output Delay
CE to Output Delay
OE to Output Delay
OE High to Output Float
(
Note1)
Address to Output hold
MIN.
MAX.
55
55
25
20
MIN.
MAX.
70
70
30
20
UNIT
ns
ns
ns
ns
ns
CONDITION
CE=OE=VIL
OE=VIL
CE=VIL
CE=VIL
CE=OE=VIL
0
0
0
0
NOTE:
1. tDF is defined as the time at which the output achieves the
open circuit condition and data is no longer driven.
TEST CONDITIONS:
Input pulse levels: 0.45V/2.4V for 70ns max., 0V/3V for 55ns
Input rise and fall times: < 10ns for 70ns max.
< 5ns for 55ns
Output load:
1 TTL gate + 100pF (Including scope and jig) for 70ns max.
1 TTL gate + 50pF (Including scope and jig) for 55ns speed
grade
Reference levels for measuring timing: 0.8V, 2.0V for 70ns
max.
: 1.5V for 55ns
29F002T/B-90
29F002T/B-12
SYMBOL
tACC
tCE
tOE
tDF
tOH
PARAMETER
Address to Output Delay
CE to Output Delay
OE to Output Delay
OE High to Output Float
(
Note1)
Address to Output hold
MIN.
MAX.
90
90
40
30
MIN.
MAX.
120
120
50
30
UNIT
ns
ns
ns
ns
ns
CONDITIONS
CE=OE=VIL
OE=VIL
CE=VIL
CE=VIL
CE=OE=VIL
0
0
0
0
READ TIMING WAVEFORMS
A0~17
CE
OE
tACC
WE
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
HIGH Z
HIGH Z
DATA Valid
tOE
tDF
tCE
DATA
Q0~7
tOH
ADD Valid
相關(guān)PDF資料
PDF描述
IMX29F002TQI-70 2M-BIT [256K x 8] CMOS FLASH MEMORY
IN4829 STABISTORS Also, Tight Tolerance
IN4830 STABISTORS Also, Tight Tolerance
IN5179 STABISTORS Also, Tight Tolerance
IN4156 IC/53C318165 D 1MW 70 MP U9S
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