參數(shù)資料
型號： IKW03N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 高速2技術(shù)與軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 3/15頁
文件大?。?/td> 431K
代理商： IKW03N120H2
IKP03N120H2,
IKW03N120H2
IKB03N120H2
Power Semiconductors
3
Rev. 2, Mar-04
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
9.2
5.2
281
29
0.14
0.15
0.29
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=800V,
I
C
=3A,
V
GE
=15V/0V,
R
G
=82
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=40pF
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during
t
b
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
t
rr
Q
rr
I
rrm
di
F
/dt
di
rr
/dt
-
-
-
-
-
42
0.23
10.3
993
1180
-
-
-
-
-
ns
μC
A
A/
μ
s
T
j
=25
°
C,
V
R
=800V,
I
F
=3A,
R
G
=82
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
9.4
6.7
340
63
0.22
0.26
0.48
-
-
-
-
-
-
-
ns
T
j
=150
°
C
V
CC
=800V,
I
C
=3A,
V
GE
=15V/0V,
R
G
=82
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=40pF
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
di
F
/dt
di
rr
/dt
-
-
-
-
-
125
0.51
12
829
540
-
-
-
-
-
ns
μC
A
A/
μ
s
T
j
=150
°
C
V
R
=800V,
I
F
=3A,
R
G
=82
2)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E
3)
Commutation diode from device IKP03N120H2
相關(guān)PDF資料
PDF描述
IKB03N120H2 Tantalum Molded Capacitor; Capacitance: .47uF; Voltage: 35V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel
IKW25T120 TRENCHSTOP SERIES
IKW40T120 LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
IKW50N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IL-G-xxP-S3x2 2.5mm Contact Spacing PCB-to-Cable Connectors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKW03N120H2FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO247-3
IKW03N120H2XK 制造商:Infineon Technologies 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247
IKW08T120 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKW08T120_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKW08T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 16A 70W TO247-3
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