參數(shù)資料
型號： IKW03N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 高速2技術(shù)與軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 10/15頁
文件大?。?/td> 431K
代理商： IKW03N120H2
IKP03N120H2,
IKW03N120H2
IKB03N120H2
Power Semiconductors
10
Rev. 2, Mar-04
V
G
,
G
-
E
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0V
200V
400V
600V
800V
0A
1A
2A
3A
I
C
C
C
U
Z
t
,
T
10μs
100μs
1ms
10ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
t
p
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 21. Typical turn off behavior, soft
switching
(V
GE
=15/0V,
R
G
=82
,
T
j
= 150
°
C,
Dynamic test circuit in Figure E)
Figure 22. Diode transient thermal
impedance as a function of pulse width
(
D
=
t
P
/
T
)
t
r
,
R
0Ohm
100Ohm
200Ohm
300Ohm
40ns
60ns
80ns
100ns
120ns
140ns
160ns
180ns
T
J
=150°C
T
J
=25°C
Q
r
,
R
0Ohm
100Ohm
200Ohm
300Ohm
0.2uC
0.3uC
0.4uC
0.5uC
0.6uC
T
J
=150°C
T
J
=25°C
R
G
,
GATE RESISTANCE
Figure 23. Typical reverse recovery time
as a function of diode current slope
V
R
=800V,
I
F
=3A,
Dynamic test circuit in Figure E)
R
G
,
GATE RESISTANCE
Figure 24. Typical reverse recovery
charge as a function of diode current
slope
(
V
R
=800V,
I
F
=3A,
Dynamic test circuit in Figure E)
R
,(K/W )
1.9222
0.5852
0.7168
R
1
τ
,
(s)
7.04E-04
2.02E-04
4.39E-03
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
相關(guān)PDF資料
PDF描述
IKB03N120H2 Tantalum Molded Capacitor; Capacitance: .47uF; Voltage: 35V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel
IKW25T120 TRENCHSTOP SERIES
IKW40T120 LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
IKW50N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKW03N120H2FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO247-3
IKW03N120H2XK 制造商:Infineon Technologies 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247
IKW08T120 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKW08T120_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKW08T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 16A 70W TO247-3
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