參數(shù)資料
型號： IHW30N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode
中文描述： 低損耗DuoPack：在TrenchStop IGBT的技術(shù)與優(yōu)化二極管
文件頁數(shù)： 4/12頁
文件大?。?/td> 367K
代理商： IHW30N60T
Soft Switching Series
IHW30N60T
q
Power Semiconductors
4
Rev. 2.1 Apr. 06
I
C
,
C
100Hz
1kHz
10kHz
100kHz
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
T
C
=110°C
T
C
=80°C
I
C
,
C
1V
10V
100V
1000V
0.1A
1A
10A
10μs
1ms
DC
t
p
=2μs
50μs
10ms
f
,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency for triangular
current (
E
on
= 0, hard turn-off)
(
T
j
≤
175
°
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 10
)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
°
C,
T
j
≤
175
°
C;
V
GE
=15V)
P
t
,
P
25°C
50°C
75°C
100°C 125°C 150°C
0W
40W
80W
120W
160W
I
C
,
C
25°C
75°C
125°C
0A
10A
20A
30A
40A
50A
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(
T
j
≤
175
°
C)
Figure 4. Collector current as a function of
case temperature
(
V
GE
≥
15V,
T
j
≤
175
°
C)
I
c
相關(guān)PDF資料
PDF描述
IHW30N90T Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
IKA06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKP20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW30N60T_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
IHW30N60TFKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 60A 187W TO247-3
IHW30N90R 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 900V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N90R_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Reverse Conducting IGBT with monolithic body diode
IHW30N90RXK 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 900V 60A 3-Pin(3+Tab) TO-247 Tube
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