參數(shù)資料
型號： IHW30N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode
中文描述： 低損耗DuoPack：在TrenchStop IGBT的技術(shù)與優(yōu)化二極管
文件頁數(shù)： 3/12頁
文件大?。?/td> 367K
代理商： IHW30N60T
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Soft Switching Series
IHW30N60T
q
Power Semiconductors
3
Rev. 2.1 Apr. 06
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
23
21
254
46
-
0.77
0.77
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=30A,
V
GE
=0/15V,
R
G
=10.6
,
L
σ
C
σ
1)
=136nH,
1)
=39pF
mJ
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
24
26
292
90
-
1.1
1.1
-
-
-
-
-
-
-
ns
T
j
=175
°
C,
V
CC
=400V,
I
C
=30A,
V
GE
=0/15V,
R
G
= 10.6
L
σ
C
σ
1)
=136nH,
1)
=39pF
mJ
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
相關(guān)PDF資料
PDF描述
IHW30N90T Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
IKA06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW30N60T_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
IHW30N60TFKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 60A 187W TO247-3
IHW30N90R 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 900V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N90R_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Reverse Conducting IGBT with monolithic body diode
IHW30N90RXK 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 900V 60A 3-Pin(3+Tab) TO-247 Tube
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