參數(shù)資料
型號: IHW30N120R
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT with monolithic body diode for soft switching Applications
中文描述: 與單片體二極管軟開關(guān)IGBT的應(yīng)用
文件頁數(shù): 6/12頁
文件大?。?/td> 987K
代理商: IHW30N120R
IHW30N120R
Soft Switching Series
q
Power Semiconductors
6
Rev. 2.2 May 06
t
S
0A
10A
20A
30A
40A
50A
10ns
100ns
1μs
t
r
t
d(on)
t
f
t
d(off)
t
S
10
20
30
40
50
60
70
100ns
1μs
t
f
t
r
t
d(off)
t
d(on)
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
V
CE
=600V, V
GE
=0/15V,
R
G
=34
,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
=175°C,
V
CE
=600V, V
GE
=0/15V,
I
C
=30A,
Dynamic test circuit in Figure E)
t
S
0°C
50°C
100°C
150°C
100ns
1μs
t
r
t
f
t
d(on)
t
d(off)
V
G
)
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
2V
3V
4V
5V
6V
min.
typ.
max.
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
=600V,
V
GE
=0/15V,
I
C
=30A,
R
G
=34
,
Dynamic test circuit in Figure E)
T
J
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 0.7mA)
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