參數(shù)資料
型號： IHW30N120R
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT with monolithic body diode for soft switching Applications
中文描述： 與單片體二極管軟開關IGBT的應用
文件頁數(shù)： 2/12頁
文件大?。?/td> 987K
代理商： IHW30N120R
IHW30N120R
Thermal Resistance
Soft Switching Series
q
Power Semiconductors
2
Rev. 2.2 May 06
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
0.38
R
thJCD
0.37
R
thJA
40
K/W
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=500
μ
A
V
GE
= 15V,
I
C
=30A
T
j
=25
°
C
T
j
=125
°
C
T
j
=175
°
C
V
GE
=0V,
I
F
=15A
T
j
=25
°
C
T
j
=125
°
C
T
j
=175
°
C
I
C
=0.7mA,
V
CE
=
V
GE
V
CE
=1200V
,
V
GE
=0V
T
j
=25
°
C
T
j
=175
°
C
1200
-
-
Collector-emitter saturation voltage
-
-
-
1.55
1.75
1.85
1.75
-
-
Diode forward voltage
V
F
-
-
-
1.3
1.35
1.4
1.5
-
-
Gate-emitter threshold voltage
V
GE(th)
5.1
5.8
6.4
V
Zero gate voltage collector current
I
CES
-
-
-
-
-
-
-
5
2500
100
-
μA
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
R
Gint
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=30A
nA
S
26
None
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
2573
76
17
197
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=30A
V
GE
=15V
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
-
13
-
nH
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相關代理商/技術參數(shù)
參數(shù)描述
IHW30N120R2 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N120R2_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
IHW30N120R2FKSA1 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N120R3 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N120R3FKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube
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