參數(shù)資料
型號: IDC05S60C
廠商: INFINEON TECHNOLOGIES AG
英文描述: 2nd generation thinQ! SiC Schottky Diode
中文描述: 第二代thinQ!碳化硅肖特基二極管
文件頁數(shù): 2/4頁
文件大?。?/td> 68K
代理商: IDC05S60C
IDC05S60C
Maximum Ratings
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
DC blocking voltage
V
RRM
V
DC
600
600
V
Continuous forward current limited by
T
jmax
Surge non repetitive forward current
sine halfwave
I
F
5
I
F,SM
T
C
=25
°
C, t
P
=10 ms
42
Repetitive peak forward current
limited by T
jmax
Non-repetitive peak forward current
I
F,RM
T
C
= 100
°
C, T
j
=150
°
C,
D=0.1
21
I
F,max
T
C
=25
°
C, tp=10μs
180
A
Operating junction and storage
temperature
Static Electrical Characteristics
(tested on chip),
T
j=25
°
C, unless otherwise specified
T
j
,
T
stg
-55...+175
°
C
Value
Parameter
Symbol
Conditions
min.
Typ.
0.6
max.
70
Unit
Reverse current
I
R
V
R
=600V
T
j
=25
°
C
μA
Diode forward voltage
V
F
I
F
=5A
T
j
=25
°
C
1.5
1.7
V
Dynamic Electrical Characteristics
,
at
T
j
= 25
°
C, unless otherwise specified, tested at component
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Total capacitive charge
Q
C
T
j
= 150 °C
12
nC
Switching time
1)
t
c
I
F
<=I
F,max
di/dt=200A/
m
s
V
R
=400V
T
j
= 150 °C
<10
ns
V
R
=1V
240
V
R
=300V
30
Total capacitance
C
f=1MHz
V
R
=600V
30
pF
1)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
which is dependent on T
j
, I
LOAD
and di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection
.
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