參數(shù)資料
型號: IDC08S60C
廠商: INFINEON TECHNOLOGIES AG
英文描述: 2nd generation thinQ! SiC Schottky Diode
中文描述: 第二代thinQ!碳化硅肖特基二極管
文件頁數(shù): 1/4頁
文件大?。?/td> 67K
代理商: IDC08S60C
IDC08S60C
2
nd
generation thinQ!
TM
SiC Schottky Diode
Applications:
SMPS, PFC, snubber
Revolutionary semiconductor material -
Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on the switching
behavior
No forward recovery
High surge current capability
Chip Type
V
BR
I
F
Die Size
1.658 x 1.52 mm
2
MECHANICAL PARAMETER:
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 27.04.2006
FEATURES:
A
C
Package
IDC08S60C
600V
8A
sawn on foil
Raster size
1.658x 1.52
Anode pad size
1.421 x 1.283
mm
Area total / active
2.52 / 1.95
mm
2
Thickness
355
μm
Wafer size
75
mm
Flat position
0
deg
Max. possible chips per wafer
1443 pcs
Passivation frontside
Photoimide
Anode metalization
3200 nm Al
Cathode metalization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
Electrically conductive glue or solder
Wire bond
Al,
350μm
Reject Ink Dot Size
0.3 mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關(guān)代理商/技術(shù)參數(shù)
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