參數(shù)資料
型號： ICM7170IDG
廠商： HARRIS SEMICONDUCTOR
元件分類： XO, clock
英文描述： Microprocessor-Compatible, Real-Time Clock
中文描述： 0 TIMER(S), REAL TIME CLOCK, CDIP24
文件頁數(shù)： 3/13頁
文件大?。?/td> 77K
代理商： ICM7170IDG
12-7
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+8.0V
Power Dissipation (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Storage Temperature Range . . . . . . . . . . . . . . . . . . -65
o
C to 150
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . . 300
o
C
Input Voltage (Any Terminal) (Note 2) . . . . V
DD
+0.3V to V
SS
-0.3V
Thermal Resistance (Typical, Note 3)
PDIP Package . . . . . . . . . . . . . . . . . . .
SBDIP Package. . . . . . . . . . . . . . . . . .
SOIC Package. . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
o
C
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
o
C
θ
JA
(
o
C/W)
65
60
75
θ
JC
(
o
C/W)
N/A
18
N/A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T
A
= 25
o
C.
2. Due to the SCR structure inherent in the CMOS process, connecting any terminal at voltages greater than V
DD
or less than V
SS
may cause
destructive device latchup. For this reason, it is recommended that no inputs from external sources not operating on the same power supply be
applied to the device before its supply is established, and that in multiple supply systems, the supply to the ICM7170 be turned on first.
3.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
DC Electrical Specifications
T
A
= -40
o
C to 85
o
C, V
DD
+5V
±
10%, V
BACKUP
V
DD
, V
SS
= 0V Unless Otherwise Specified
All I
DD
specifications include all input and output leakages (ICM7170 and ICM7170A)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
DD
Supply Range, V
DD
f
OSC
= 32kHz
1.9
-
5.5
V
f
OSC
= 1, 2, 4MHz
2.6
-
5.5
V
Standby Current, I
STBY(1)
f
OSC
= 32kHz
Pins 1 - 8,15 - 22 and 24 = V
DD
ICM7170
-
1.2
20.0
μ
A
V
DD
= V
SS
;
V
BACKUP
= V
DD
- 3.0V
For ICM7170A
See General Notes 5
ICM7170A
-
1.2
5.0
μ
A
Standby Current, I
STBY
(2)
f
OSC
= 4MHz
Pins 1 - 8,15 - 22 and 24 = V
DD
V
DD
= V
SS
;
V
BACKUP
= V
DD
- 3.0V
-
20
150
μ
A
Operating Supply Current, I
DD(1)
f
OSC
= 32kHz
Read/Write Operation at 100Hz
-
0.3
1.2
mA
Operating Supply Current, I
DD(2)
f
OSC
= 32kHz
Read/Write Operation at 1MHz
-
1.0
2.0
mA
Input Low Voltage
(Except Osc.), V
IL
V
DD
= 5.0V
-
-
0.8
V
Input High Voltage
(Except Osc.), V
IH
V
DD
= 5.0V
2.4
-
-
V
Output Low Voltage
(Except Osc.), V
OL
I
OL
= 1.6mA
-
-
0.4
V
Output High Voltage Except
INTERRUPT
(Except Osc.), V
OH
I
OH
= -400
μ
A
2.4
-
-
V
Input Leakage Current, I
IL
V
IN
= V
DD
or V
SS
-10
0.5
+10
μ
A
Three-State Leakage Current
(D0 - D7), I
OL
(1)
V
O
= V
DD
or V
SS
-10
0.5
+10
μ
A
Backup Battery Voltage,
V
BATTERY
f
OSC
= 1, 2, 4MHz
2.6
-
V
DD
- 1.3
V
Backup Battery Voltage,
V
BATTERY
f
OSC
= 32kHz
1.9
-
V
DD
- 1.3
V
ICM7170
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