Internet Data Sheet
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
3
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
1
Overview
This chapter gives an overview of the 1.8 V 240-Pin Unbuffered DDR2 SDRAM Modules product family and describes its main
characteristics.
1.1
Features
240-Pin PC2–6400, PC2–5300, PC2–4200 and PC2–
3200 DDR2 SDRAM memory modules for use as main
memory when installed in systems such as mobile
personal computers.
16M
×
64, 32M
×
64, 32M
×
72, 64M
×
64, 64M
×
72
module organization and 16M
×
16, 32M
×
8 chip
organization
128 MB, 256 MB and 512 MB modules built with 256-Mbit
DDR2 SDRAMs in PG-TFBGA-60 and PG-TFBGA-84
chipsize packages
Standard Double-Data-Rate-Two Synchronous DRAMs
(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power
supply
All Speed Grades faster than DDR2–400 comply with
DDR2–400 timing specifications
Programmable CAS Latencies (3, 4, 5 and 6), Burst
Length (4 & 8) and Burst Type
Auto Refresh (CBR) and Self Refresh
Average Refresh Period 7.8 μs at a
T
CASE
lower than
85 °C, 3.9 μs between 85 °C and 95 °C
Programmable self refresh rate via EMRS2 setting
All inputs and outputs SSTL_18 compatible
Off-Chip Driver Impedance Adjustment (OCD) and On-Die
Termination (ODT)
Serial Presence Detect with E
2
PROM
UDIMM Dimensions (nominal): 30 mm high, 133.35 mm
wide
Based on standard reference layouts Raw Card “A”, “C”,
“D“, “E“, “F” and “G”
RoHS compliant products
1)
TABLE 1
Performance Table
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Product Type Speed Code
–25F
–2.5
–3
–3S
–3.7
–5
Unit
Speed Grade
PC2–6400
5–5–5
PC2–6400
6–6–6
PC2–5300
4–4–4
PC2–5300
5–5–5
PC2–4200
4–4–4
PC2–3200
3–3–3
—
Max. Clock Frequency
@CL6
@CL5
@CL4
@CL3
f
CK6
f
CK5
f
CK4
f
CK3
t
RCD
t
RP
t
RAS
t
RC
400
400
266
200
12.5
12.5
45
57.5
400
333
266
200
15
15
45
60
–
333
333
200
12
12
45
57
–
333
266
200
15
15
45
60
–
266
266
200
15
15
45
60
–
200
200
200
15
15
40
55
MHz
MHz
MHz
MHz
ns
ns
ns
ns
Min. RAS-CAS-Delay
Min. Row Precharge Time
Min. Row Active Time
Min. Row Cycle Time