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參數(shù)資料

型號(hào)：	HYE18M256320CF-7.5
廠商：	QIMONDA AG
元件分類：	DRAM
英文描述：	8M X 32 DDR DRAM, 6 ns, PBGA90
封裝：	10 X 12.50 MM, 1 MM HEIGHT, GREEN, VFBGA-90
文件頁數(shù)：	5/26頁
文件大?。?/td>	1609K
代理商：	HYE18M256320CF-7.5

Internet Data Sheet

Rev.1.44, 2007-07

06262007-JK8G-48BV

HY[B/E]18M256[16/32]0CF

256-Mbit DDR Mobile-RAM

TABLE 7

Current State Bank n - Command to Bank m (different bank)

Current State

RAS CAS WE

Command / Action

Note

Any

DESELECT (NOP / continue previous operation)

1)2)3)4)5)6)

1) This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Table 7) and after

XP or tXSR has been met (if the previous state was

power-down or self refresh).

2) This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands shown are those

allowed to be issued to bank m (assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in

the notes below.

3) Current state definitions:Idle: The bank has been precharged, and

RP has been met.Row Active: A row in the bank has been activated,

and

RCD has been met. No data bursts / accesses and no register accesses are in progress.Read: A read burst has been initiated, with

Auto Precharge disabled, and has not yet terminated or been terminated.Write: A write burst has been initiated, with Auto Precharge

disabled, and has not yet terminated or been terminated.Read with AP enabled: Starts with registration of a READ command with Auto

Precharge enabled and ends when tRP has been met. Once tRP is met, the bank is in the idle state.Write with AP enabled: Starts with

registration of a WRITE command with Auto Precharge enabled and ends when tRP has been met. Once tRP is met, the bank is in the

idle state.

4) AUTO REFRESH, SELF REFRESH and MODE REGISTER SET commands may only be issued when all banks are idle.

5) A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only.

6) All states and sequences not shown are illegal or reserved.

NO OPERATION (NOP / continue previous operation)

1)2)3)4)5)6)

Idle

Any command otherwise allowed to bank m

1)2)3)4)5)6)

Row Activating,

Active, or

Precharging

ACTIVE (select and activate row)

1)2)3)4)5)6)

READ (select column and start Read burst)

1)2)3)4)5)6)7)

7) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads or Writes with

Auto Precharge disabled.

WRITE (select column and start Write burst)

1)2)3)4)5)6)7)

PRECHARGE (Deactivate row in bank or banks)

1)2)3)4)5)6)

Read (Auto-

Precharge

Disabled)

ACTIVE (select and activate row)

1)2)3)4)5)6)

READ (truncate Read and start new Read burst)

1)2)3)4)5)6)7)

WRITE (truncate Read and start Write burst)

1)2)3)4)5)6)7)8)

8) A WRITE command may be applied after the completion of the Read burst; otherwise, a BURST TERMINATE command must be used to

end the Read burst prior to issuing a WRITE command.

PRECHARGE (Deactivate row in bank or banks)

1)2)3)4)5)6)

Write (Auto-

Precharge

Disabled)

ACTIVE (select and activate row)

1)2)3)4)5)6)

READ (truncate Write and start Read burst)

1)2)3)4)5)6)7)9)

9) Requires appropriate DM masking.

WRITE (truncate Write and start new Write burst)

1)2)3)4)5)6)7)

PRECHARGE (Deactivate row in bank or banks)

1)2)3)4)5)6)

Read(with Auto-

Precharge)

ACTIVE (select and activate row)

1)2)3)4)5)6)

READ (truncate Read and start new Read burst)

1)2)3)4)5)6)7)

WRITE (truncate Read and start Write burst)

1)2)3)4)5)6)7)8)

PRECHARGE (deactivate row in bank or banks)

1)2)3)4)5)6)

Write(with Auto-

Precharge)

ACTIVE (select and activate row)

1)2)3)4)5)6)

READ (truncate Write and start Read burst)

1)2)3)4)5)6)7)

WRITE (truncate Write and start new Write burst)

1)2)3)4)5)6)7)

PRECHARGE (Deactivate row in bank or banks)

1)2)3)4)5)6)

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相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
HYE18M512160BF-6	制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
HYE18M512160BF-7.5	制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
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HYE18P16161AC-60	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYE18P16161AC-70	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM

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