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參數(shù)資料
| 型號： | HYE18M256320CF-7.5 |
| 廠商： | QIMONDA AG |
| 元件分類： | DRAM |
| 英文描述： | 8M X 32 DDR DRAM, 6 ns, PBGA90 |
| 封裝： | 10 X 12.50 MM, 1 MM HEIGHT, GREEN, VFBGA-90 |
| 文件頁數(shù)： | 21/26頁 |
| 文件大?。?/td> | 1609K |
| 代理商： | HYE18M256320CF-7.5 |
Internet Data Sheet
Rev.1.44, 2007-07
4
06262007-JK8G-48BV
HY[B/E]18M256[16/32]0CF
256-Mbit DDR Mobile-RAM
TABLE 1
Performance
TABLE 2
Memory Addressing Scheme
TABLE 3
Ordering Information
Part Number Speed Code
– 6
– 7.5
Unit
Clock Frequency (
f
CKmax)
CL = 3
166
133
MHz
CL = 2
83
MHz
Access Time (
t
ACmax)
5.5
6.0
ns
Item
Addresses
Banks
BA0, BA1
Rows
A0 - A12 (x16)
A0 - A11 (x32)
Columns
A0 - A8
Type1)
1) HY[B/E]: Designator for memory products (HYB: Standard temp. range, HYE: Extended temp. range)
18M: 1.8V DDR Mobile-RAM
256: 256 MBit density
16/32: 16 or 32 bit interface width
C: die revisionF: green product
-6 / -7.5: speed grades (min. clock cycle time)
Package
Description
Standard Temperature Range
HYB18M256320CF–6/7.5
HYB18M256160CF–6/7.5
90–ball PG-VFBGA-60-3
60–ball PG-VFBGA-60-4
166/133 MHz 4 Banks
× 2 Mbit × 32 Low Power DDR SDRAM
166/133 MHz 4 Banks
× 4 Mbit × 16 Low Power DDR SDRAM
Extended Temperature Range
HYE18M256320CF–6/7.5
HYE18M256160CF–6/7.5
90–ball PG-VFBGA-60-3
60–ball PG-VFBGA-60-4
166/133 MHz 4 Banks
× 2 Mbit × 32 Low Power DDR SDRAM
166/133 MHz 4 Banks
× 4 Mbit × 16 Low Power DDR SDRAM
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYE18M512160BF-6 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant |
| HYE18M512160BF-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant |
| HYE18P16161AC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM |
| HYE18P16161AC-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM |
| HYE18P16161AC-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM |
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