參數(shù)資料
型號(hào): HYB18H1G321AF
廠商: QIMONDA
英文描述: GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM
中文描述: GDDR3顯卡內(nèi)存1千兆位GDDR3顯卡內(nèi)存
文件頁數(shù): 34/48頁
文件大小: 1406K
代理商: HYB18H1G321AF
HYB18H1G321AF–10/11/14
1-Gbit GDDR3
Internet Data Sheet
Rev. 0.92, 2007-10
06122007-MW7D-3G3M
34
5.8
Termination IV Characteristic at 120 Ohms
Figure 18
represents the DQ or ADD/CMD termination Pull-Up IV characteristic under process, voltage and temperature best
and worst case conditions. The actual termination Pull-Up current must lie between these two bounding curves. The value of
the external ZQ resistor is 240
Ω
, setting the nominal termination impedance to 120
Ω
. (Extended Mode Register programmed
to ZQ/2 for DQ terminations or CKE = 0 at the RES transition during Power-Up for ADD/CMD terminations).
FIGURE 18
120 Ohm Active Termination Characteristic
Table 18
lists the numerical values of the minimum and maximum allowed values of the termination IV characteristic.
TABLE 18
Programmed Terminator Characteristics of 120 Ohm
Voltage (V)
Terminator Pull-Up Current (mA)
Voltage (V)
Terminator Pull-Up Current (mA)
Minimum
Maximum
Minimum
Maximum
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-0.81
-1.60
-2.34
-3.06
-3.74
-4.39
-5.00
-5.58
-6.12
-6.63
-1.09
-2.14
-3.15
-4.12
-5.06
-5.94
-6.79
-7.59
-8.35
-9.06
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
-7.11
-7.57
-8.02
-8.47
-8.91
-9.35
-9.79
-10.22
-9.72
-10.42
-11.00
-11.67
-12.33
-13.05
-13.75
-14.43
-15.08
-15.69
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