參數(shù)資料
型號(hào): HY62UF16804A-SM70I
廠商: HYNIX SEMICONDUCTOR INC
元件分類(lèi): SRAM
英文描述: 512K X 16 STANDARD SRAM, 70 ns, PBGA48
封裝: MICRO, BGA-48
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 137K
代理商: HY62UF16804A-SM70I
HY62UF16804A
Rev.10/Jan. 2002
2
ORDERING INFORMATION
Part No.
Speed
Power
Package
Temp.
HY62UF16804A-DMC
55/70/85
LL-part
uBGA
C
HY62UF16804A-SMC
55/70/85
SL-part
uBGA
C
HY62UF16804A-DMI
55/70/85
LL-part
uBGA
I
HY62UF16804A-SMI
55/70/85
SL-part
uBGA
I
Note 1. C : Commercial, I : Industrial
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
Parameter
Rating
Unit
Remark
VIN, VOUT
Input/Output Voltage
-0.3 to Vcc+0.3V
V
Vcc
Power Supply
-0.3 to 3.6
V
0 to 70
°C
HY62UF16804A-C
TA
Operating Temperature
-40 to 85
°C
HY62UF16804A-I
TSTG
Storage Temperature
-55 to 150
°C
PD
Power Dissipation
1.0
W
TSOLDER
Ball Soldering Temperature & Time
260
10
°C sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
I/O
/CS
/WE
/OE
/LB
/UB
Mode
I/O1~I/O8
I/O9~I/O16
Power
H
X
Deselected
High-Z
Standby
X
H
Deselected
High-Z
Standby
L
H
L
X
Output Disabled
High-Z
Active
L
H
X
L
Output Disabled
High-Z
Active
L
H
L
H
Read
DOUT
High-Z
Active
H
L
High-Z
DOUT
L
DOUT
L
X
L
H
Write
DIN
High-Z
Active
H
L
High-Z
DIN
L
DIN
Note:
1. H=VIH, L=VIL, X=don't care(VIH or VIL)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O1 -I/O8.
When /UB is LOW, data is written or read to the upper byte, I/O9 -I/O16.
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