參數(shù)資料
型號: HY62UF16804A-SM70I
廠商: HYNIX SEMICONDUCTOR INC
元件分類: SRAM
英文描述: 512K X 16 STANDARD SRAM, 70 ns, PBGA48
封裝: MICRO, BGA-48
文件頁數(shù): 1/10頁
文件大小: 137K
代理商: HY62UF16804A-SM70I
This document is a general product description and is subject to change without notice. Hyundai Electronics does not
assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.10 /Jan2002
Hynix Semiconductor
HY62UF16804A Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM
Revision History
Revision No
History
Draft Date
Remark
04
Initial Revision History Insert
Jul.02.2000
Preliminary
Revised
- Reliability Spec Deleted
05
Change AC Characteristics
Oct.23.2000
Preliminary
- tBLZ : 5/5/5
---> 10/10/10
06
Part Number is changed
Nov.13.2000
Preliminary
- HY62UF16803A
--> HY62UF16804A
07
Marking Instruction is inserted
Dec.5.2000
Preliminary
08
Test Condition Changed
Dec.16.2000
Preliminary
- ILO / ISB / ISB1 / VDR / ICCDR
Marking Istruction Inserted
09
Change Logo
Apr.28.2001
- Hyundai
à Hynix
10
Change DC Parameter
Jan.28.2002
- Isb1(LL)
: 40uA
à 25uA
- Isb1(Typ)
: 8uA
à
1uA
- Icc
: 5mA
à 4mA
- Icc1(1us) : 8mA
à 4mA
- Icc1(Min) : 50mA
à 40mA
Change Data Retention
- IccDR(LL) : 25uA
à 15uA
Change AC Parameter
- tOE
: 35ns
à 25ns@55ns
: 40ns
à 35ns@70ns
- tCW
: 50ns
à 45ns@55ns
- tAW
: 50ns
à 45ns@55ns
- tBW
: 50ns
à 45ns@55ns
- tWP
: 45ns
à 40ns@55ns
- tCHZ
: 30ns
à 20ns@55ns , 30ns à 25ns@70ns
- tOHZ
: 30ns
à 20ns@55ns , 30ns à 25ns@70ns
- tBHZ
: 30ns
à 20ns@55ns , 30ns à 25ns@70ns
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