參數(shù)資料
型號(hào): HY62UF16101CSLT2-I-85
廠商: HYNIX SEMICONDUCTOR INC
元件分類: SRAM
英文描述: 64K X 16 STANDARD SRAM, 85 ns, PDSO44
封裝: 0.400 INCH, TSOP2-44
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 160K
代理商: HY62UF16101CSLT2-I-85
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 /Jun. 00
Hyundai Semiconductor
HY62UF16100C Series
64Kx16bit full CMOS SRAM
PRELIMINARY
DESCRIPTION
The HY62UF16100C is a high speed, super low
power and 1M bit full CMOS SRAM organized as
65,536 words by 16bit. The HY62UF16100C
uses
high
performance
full
CMOS
process
technology and designed for high speed low
power circuit technology. It is particularly well
suited for used in high density low power system
application. This device has a data retention mode
that guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(LL/SL-part)
-. 1.2V(min) data retention
Standard pin configuration
-. 44 - TSOPII - 400mil
-. 48 - FBGA
Product
Voltage
Speed
Operation
Standby Current(uA)
Temperature
No.
(V)
(ns)
Current(mA)
LL
SL
(
°C)
HY62UF16100C
2.7~3.3
55/70/85
3
5
1
0~70
HY62UF16100C-I
2.7~3.3
55/70/85
3
5
1
-40~85(I)
Note 1. Blank : Commercial, I : Industrial
2. Current value is max.
PIN CONNECTION
BLOCK DIAGRAM
/LB
IO9
IO10
/OE A0
A1
A2
NC
/UB A3
A4
/CS IO1
IO11 A5
A6
IO2 IO3
Vss IO12 NC
A7
IO4 Vcc
Vcc IO13 NC
NC
IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
IO16 NC
A12 A13 /WE IO8
NC
A8
A9
A10 A11 NC
A5
A6
/OE
/UB
/LB
I/O16
I/O15
I/O14
I/O13
GND
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
A7
A4
A3
A2
A1
A0
/CS
I/O1
I/O2
I/O3
I/O4
Vcc
GND
I/O5
I/O6
I/O7
I/O8
/WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
FBGA
TSOP ll
PIN DESCRIPTION
Pin Name
Pin Function
Pin Name
Pin Function
/CS
Chip Select
I/O1~I/O16
Data Inputs / Outputs
/WE
Write Enable
A0~A15
Address Inputs
/OE
Output Enable
Vcc
Power(2.7V~3.3V)
/LB
Low Byte Control(I/O1~I/O8)
Vss
Ground
/UB
Upper Byte Control(I/O9~I/O16)
NC
No Connection
MEMORY ARRAY
64K X 16
ROW
DECODER
SENSE
AMP
WRITE
DRIVER
DATA
I/O
BUFFER
I/O1
I/O8
I/O9
I/O16
COLUMN
DECODER
BLOCK
DECODER
PRE
DECODER
ADD
INPUT
BUFFER
ADD
INPUT
BUFFER
A1~A7
A14
A15
A8
A9
A10
A11
A12
A13
A0
/CS
/OE
/LB
/UB
/WE
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