參數(shù)資料
型號: HY5S6B6DSF-BE
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 4Banks x1M x 16bits Synchronous DRAM
中文描述: 4M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA54
封裝: 0.80 MM PITCH, FBGA-54
文件頁數(shù): 27/27頁
文件大?。?/td> 368K
代理商: HY5S6B6DSF-BE
Rev 0.3 / July 2004
27
HY5S6B6D(L/S)F(P)-xE
4Banks x 1M x 16bits Synchronous DRAM
PACKAGE INFORMATION
54 Ball 0.8mm pitch 8mm FBGA
Unit [mm]
1.20max
0.340
±
0.05
0.450
±
0.05
8.0
6.40BSC
0.80(Typ)
A1 INDEX MARK
8
0.80(Typ)
6
4.00
±
0.05
Bottom
View
0.8
3.20
±
0.05
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PDF描述
HY5S6B6DSFP-BE 4Banks x1M x 16bits Synchronous DRAM
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HY5S6B6DSF-SE 4Banks x1M x 16bits Synchronous DRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5S6B6DSFP-BE 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DSFP-SE 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DSF-SE 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM
HY5S7B2ALFP-6 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M (16Mx32bit) Mobile SDRAM
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