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參數(shù)資料
| 型號(hào)： | HY5DU561622EFP |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256Mb DDR SDRAM |
| 中文描述： | 256Mb的DDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 3/29頁 |
| 文件大?。?/td> | 260K |
| 代理商： | HY5DU561622EFP |
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Rev. 1.1 / J une 2006
3
1
HY5DU56822E(L)FP
HY5DU561622E(L)FP
DESCRIPTION
The HY5DU56822E(L)FP, and HY5DU561622E(L)FP are a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous
DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
This Hynix 256Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,
Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are inter-
nally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible
with SSTL_2.
FEATURES
V
DD
, V
DDQ
= 2.5V
±
0.2V for DDR200, 266, 333
V
DD
, V
DDQ
= 2.6V +0.1V / -0.2V for DDR400
All inputs and outputs are compatible with SSTL_2
interface
Fully differential clock inputs (CK, /CK) operation
Double data rate interface
Source synchronous - data transaction aligned to
bidirectional data strobe (DQS)
x16 device has two bytewide data strobes (UDQS,
LDQS) per each x8 I/O
Data outputs on DQS edges when read (edged DQ)
Data inputs on DQS centers when write (centered
DQ)
On chip DLL align DQ and DQS transition with CK
transition
DM mask write data-in at the both rising and falling
edges of the data strobe
All addresses and control inputs except data, data
strobes and data masks latched on the rising edges
of the clock
Programmable CAS latency 2/2.5 (DDR200, 266,
333) and 3 (DDR400) supported
Programmable burst length 2/4/8 with both sequen-
tial and interleave mode
Internal four bank operations with single pulsed
/RAS
Auto refresh and self refresh supported
tRAS lock out function supported
8192 refresh cycles / 64ms
60 Ball FBGA Package Type
Full and Half strength driver option controlled by
EMRS
Lead free (*ROHS Compliant)
ORDERING INFORMATION
* x means speed grade
* ROHS (Restriction Of Hazardous Substances)
Part No.
Configuration
Package
HY5DU56822E(L)F-x*
32M x 8
60 Ball FBGA
(Lead free)
HY5DU561622E(L)F-x*
16M x 16
OPERATING FREQUENCY
Grade
Clock Rate
Remark
(CL-tRCD-tRP)
-D43
200MHz@CL3
DDR400B (3-3-3)
- J
133MHz@CL2
166MHz@CL2.5
DDR333 (2.5-3-3)
- K
133MHz@CL2
133MHz@CL2.5
DDR266A (2-3-3)
- H
100MHz@CL2
133MHz@CL2.5
DDR266B (2.5-3-3)
- L
100MHz@CL2
DDR200 (2-2-2)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5DU561622ELFP | 256Mb DDR SDRAM |
| HY5DU561622ELFP-D43 | 256Mb DDR SDRAM |
| HY5DU561622ELFP-H | 256Mb DDR SDRAM |
| HY5DU561622ELFP-J | 256Mb DDR SDRAM |
| HY5DU561622ELFP-K | 256Mb DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DU561622EFP-D43-C | 制造商:SK Hynix Inc 功能描述: |
| HY5DU561622EFP-D43DR-C | 制造商:SK Hynix Inc 功能描述: |
| HY5DU561622ELFP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM |
| HY5DU561622ELFP-D43 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM |
| HY5DU561622ELFP-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM |
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