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參數(shù)資料
| 型號： | HY5DS113222FM-33 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 512M(16Mx32) GDDR SDRAM |
| 中文描述： | 16M X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封裝： | 12 X 12 MM, 0.80 MM PITCH, MO-205DAE, FBGA-144 |
| 文件頁數(shù)： | 9/30頁 |
| 文件大?。?/td> | 431K |
| 代理商： | HY5DS113222FM-33 |
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Rev. 0.1 / Oct. 2004
9
HY5DS113222FM(P)
OPERATION COMMAND TRUTH TABLE - I
Current
State
/CS0
/CS1
/RAS
/CAS
/WE
Address
Command
Action
IDLE
H
X
X
X
X
DSEL
NOP or power down
3
L
H
H
H
X
NOP
NOP or power down
3
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
4
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
4
L
L
H
H
BA, RA
ACT
Row Activation
L
L
H
L
BA, AP
PRE/PALL
NOP
L
L
L
H
X
AREF/SREF
Auto Refresh or Self Refresh
5
L
L
L
L
OPCODE
MRS *12
Mode Register Set
ROW
ACTIVE
H
X
X
X
X
DSEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP*13
Begin read : optional AP
6
L
H
L
L
BA, CA, AP
WRITE/WRITEAP*13
Begin write : optional AP
6
L
L
H
H
BA, RA
ACT
ILLEGAL
4
L
L
H
L
BA, AP
PRE/PALL
Precharge
7
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
READ
H
X
X
X
X
DSEL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
Terminate burst
L
H
L
H
BA, CA, AP
READ/READAP*13
Term burst, new read:optional AP
8
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
4
L
L
H
L
BA, AP
PRE/PALL
Term burst, precharge
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
WRITE
H
X
X
X
X
DSEL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP*13
Term burst, new read:optional AP
8
L
H
L
L
BA, CA, AP
WRITE/WRITEAP*13
Term burst, new write:optional AP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5DS113222FM-36 | 512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-4 | 512M(16Mx32) GDDR SDRAM |
| HY5DS113222FMP-28 | 512M(16Mx32) GDDR SDRAM |
| HY5DS113222FMP-33 | 512M(16Mx32) GDDR SDRAM |
| HY5DS113222FMP-36 | 512M(16Mx32) GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DS113222FM-36 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-4 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FMP-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FMP-33 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FMP-36 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
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