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參數資料
| 型號： | HY57V658020BTC |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 8Mx8|3.3V|4K|H|SDR SDRAM - 64M |
| 中文描述： | 8Mx8 | 3.3 | 4K的|魔| SDRAM的特別提款權- 64米 |
| 文件頁數： | 6/12頁 |
| 文件大?。?/td> | 146K |
| 代理商： | HY57V658020BTC |
HY57V658020B
Rev. 1.6/Nov. 01
6
DC CHARACTERISTICS II
(TA=0 to 70
°
C
, V
DD
=3.3
±
0.3V, V
SS
=0V)
Note :
1.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V658020BTC-75/8/10P/10S/10
4.HY57V658020BLTC-75/8/10P/10S/10
Parameter
Symbol
Test Condition
Speed
Unit
Note
-75
-8
-10P
-10S
-10
Operating Current
I
DD1
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
90
80
70
70
60
mA
1
Precharge Standby Current
in Power Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
CK
= min
2
mA
I
DD2PS
CKE
≤
V
IL
(max), t
CK
=
∞
2
mA
Precharge Standby Current
in Non Power Down Mode
I
DD2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
15
mA
I
DD2NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
15
mA
Active Standby Current
in Power Down Mode
I
DD3P
CKE
≤
V
IL
(max), t
CK
= min
5
mA
I
DD3PS
CKE
≤
V
IL
(max), t
CK
=
∞
5
mA
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
30
mA
I
DD3NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
30
mA
Burst Mode Operating Current
I
DD4
t
CK
≥
t
CK
(min), I
OL
=0mA
All banks active
CL=3
120
110
90
90
90
mA
1
CL=2
90
90
90
90
90
mA
Auto Refresh Current
I
DD5
t
RRC
≥
t
RRC
(min), All banks active
200
200
180
180
150
mA
2
Self Refresh Current
I
DD6
CKE
≤
0.2V
2
mA
3
500
uA
4
相關PDF資料 |
PDF描述 |
|---|---|
| HY57V658020BLTC-10 | CAP,0603,50V,NPO,150PF |
| HY57V658020BLTC-10P | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BLTC-10S | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BLTC-75 | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BLTC-8 | CCAP 2.0PF +-.25 50V 0603 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY57V658020BTC-10 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BTC-10P | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BTC-10S | 制造商:HYNDAI 功能描述: |
| HY57V658020BTC-10SI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
| HY57V658020BTC-75 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
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