- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385424 > HY57V658020BLTC-10P (HYNIX SEMICONDUCTOR INC) 4 Banks x 2M x 8Bit Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HY57V658020BLTC-10P |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4 Banks x 2M x 8Bit Synchronous DRAM |
| 中文描述： | 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 146K |
| 代理商： | HY57V658020BLTC-10P |
HY57V658020B
Rev. 1.6/Nov. 01
2
PIN CONFIGURATION
PIN DESCRIPTION
PIN
PIN NAME
DESCRIPTION
CLK
Clock
The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
CKE
Clock Enable
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
CS
Chip Select
Enables or disables all inputs except CLK, CKE and DQM
BA0, BA1
Bank Address
Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
A0 ~ A11
Address
Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA8
Auto-precharge flag : A10
RAS, CAS, WE
Row Address Strobe,
Column Address Strobe,
Write Enable
RAS, CAS and WE define the operation
Refer function truth table for details
DQM
Data Input/Output Mask
Controls output buffers in read mode and masks input data in write mode
DQ0 ~ DQ7
Data Input/Output
Multiplexed data input / output pin
VDD/VSS
Power Supply/Ground
Power supply for internal circuits and input buffers
VDDQ/VSSQ
Data Output Power/Ground
Power supply for output buffers
NC
No Connection
No connection
V
SS
DQ7
V
SSQ
NC
DQ6
V
DDQ
NC
DQ5
V
SSQ
NC
DQ4
V
DDQ
NC
V
SS
NC
DQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
DD
DQ0
V
DDQ
NC
DQ1
V
SSQ
NC
DQ2
V
DDQ
NC
DQ3
V
SSQ
NC
V
DD
NC
/WE
/CAS
/RAS
/CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
54pin TSOP II
400mil x 875mil
0.8mm pin pitch
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V658020BLTC-10S | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BLTC-75 | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BLTC-8 | CCAP 2.0PF +-.25 50V 0603 |
| HY57V658020BTC-10 | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BTC-10P | 4 Banks x 2M x 8Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V658020BLTC-10S | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BLTC-75 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BLTC-8 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BTC | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8Mx8|3.3V|4K|H|SDR SDRAM - 64M |
| HY57V658020BTC-10 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。