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參數(shù)資料
| 型號(hào)： | HY57V658020BTC-10P |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Banks x 2M x 8Bit Synchronous DRAM |
| 中文描述： | 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 146K |
| 代理商： | HY57V658020BTC-10P |
HY57V658020B
4 Banks x 2M x 8Bit Synchronous DRAM
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 1.6/Nov. 01 1
DESCRIPTION
The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which
require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.
HY57V658020B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchro-
nized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output
voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by
a single control command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of read
or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or
write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
FEATURES
Single 3.3
±
0.3V power supply
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin
pitch
All inputs and outputs referenced to positive edge of sys-
tem clock
Data mask function by DQM
Internal four banks operation
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
Clock Frequency
Power
Organization
Interface
Package
HY57V658020BTC-75
133MHz
Normal
4Banks x 4Mbits x4
LVTTL
400mil 54pin TSOP II
HY57V658020BTC-8
125MHz
HY57V658020BTC-10P
100MHz
HY57V658020BTC-10S
100MHz
HY57V658020BTC-10
100MHz
HY57V658020BLTC-75
133MHz
Low power
HY57V658020BLTC-8
125MHz
HY57V658020BLTC-10P
100MHz
HY57V658020BLTC-10S
100MHz
HY57V658020BLTC-10
100MHz
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| HY57V658020BTC-10S | CAP CER NP0 22PF 50V 0603 |
| HY57V658020BTC-75 | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BTC-8 | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY5DS113222FM | 512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-28 | 512M(16Mx32) GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V658020BTC-10S | 制造商:HYNDAI 功能描述: |
| HY57V658020BTC-10SI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
| HY57V658020BTC-75 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V658020BTC-75I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
| HY57V658020BTC-7I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
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