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參數(shù)資料
| 型號(hào)： | HY57V161610ET-55 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50 |
| 封裝： | 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 |
| 文件頁(yè)數(shù)： | 4/13頁(yè) |
| 文件大?。?/td> | 181K |
| 代理商： | HY57V161610ET-55 |
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HY57V161610E
Rev. 0.2 / Aug. 2003
4
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability.
DC OPERATING CONDITION
(TA=0
°
C
to 70
°
C
)
Note :
1.All voltages are referenced to V
SS
= 0V.
2.V
DD
(min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2
3.V
DD
(min) of HY57V161610ET-5/55 is 3.15V
4.Vih(Max) : 4.6V AC pulse width with < 3ns of duration.
5.Vil(min) : -1.5V AC pulse width with < 3ns of duration.
AC OPERATING CONDITION
(TA=0
°
C
to 70
°
C
, V
DD
=3.0V to
3.6V, V
SS
=0V)
Note :
1. Output load to measure access times is equivalent to two TTL gates and one capacitance(30pF).
For details, refer to AC/DC output load circuit.
2. V
DD
(min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2 and tCK2=8.9ns
3. V
DD
(min) of HY57V161610ET-5/55 is 3.15V‘
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
°
C
Storage Temperature
T
STG
-55 ~ 125
°
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
relative to V
SS
V
DD
-1.0 ~ 4.6
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D
1
W
Soldering Temperature
·
Time
T
SOLDER
260
·
10
°
C
·
Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
1, 2, 3
Input high voltage
V
IH
2.0
3.0
V
DD
+ 0.3
V
1, 4
Input low voltage
V
IL
-0.3
0
0.8
V
1, 5
Parameter
Symbol
Value
Unit
Note
AC input high / low level voltage
V
IH
/ V
IL
2.4/0.4
V
Input timing measurement reference level voltage
Vtrip
1.4
V
Input rise / fall time
tR / tF
1
ns
Output timing measurement reference level
Voutref
1.4
V
Output load capacitance for access time measurement
CL
30
pF
1
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HY57V161610ET-55I | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-5I | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-6 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-6I | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-7 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
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