參數(shù)資料
型號(hào)： HY29LV320BF-12
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： Dust Cover; For Use With:Anderson Power SB350 Series Connectors; Color:Red
中文描述： 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
封裝： 7 X 11 MM, FBGA-63
文件頁數(shù)： 34/44頁
文件大?。?/td> 323K
代理商： HY29LV320BF-12
34
r1.3/May 02
HY29LV320
AC CHARACTERISTICS
Program and Erase Operations
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Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25
°
C, V
= 3.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90
°
C, V
= 2.7 volts (3.0 volts for - 70 version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 9 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
are programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
words program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum
word program time specified is exceeded. See Write Operation Status section for additional information.
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相關(guān)PDF資料
PDF描述
HY29LV320BF-12I 32 Mbit (2M x 16) Low Voltage Flash Memory
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