參數(shù)資料
型號: HY29F400TG-70
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: x8/x16 Flash EEPROM
中文描述: 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
封裝: PLASTIC, SOP-44
文件頁數(shù): 29/40頁
文件大?。?/td> 509K
代理商: HY29F400TG-70
29
Rev. 5.2/May 01
HY29F400
AC CHARACTERISTICS
Notes:
1. SA =Sector Address (for sector erase), VA = Valid Address for reading status data (see Write Operation Status section),
D
is the true data at the read address.(0xFF after an erase operation).
2. Commands shown are for Word mode operation.
3. V
CC
shown only to illustrate t
VCS
measurement references. It cannot occur as shown during a valid command sequence.
Figure 18. Sector/Chip Erase Operation Timings
Addresses
CE#
t
WC
0x2AA
VA
VA
SA
OE#
t
AS
t
AH
t
WPH
t
WP
t
GHWL
t
CS
t
CH
WE#
Data
t
DS
t
DH
0x55
0x30
Status
D
OUT
t
WHWH2
or
WHWH3
RY/BY#
t
BUSY
t
RB
t
VCS
V
CC
Erase Command Sequence (last two cycles)
Read Status Data (last two cycles)
Address = 0x555
for chip erase
Data = 0x10
for chip erase
相關(guān)PDF資料
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參數(shù)描述
HY29F400TG90 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400TG-90 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM
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HY29F400TR-45 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM
HY29F400TR55 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory