- 您現在的位置：買賣IC網 > PDF目錄384461 > HY27UF161G2M-TIP (HYNIX SEMICONDUCTOR INC) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory PDF資料下載
參數資料
| 型號： | HY27UF161G2M-TIP |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| 中文描述： | 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 |
| 文件頁數： | 47/48頁 |
| 文件大?。?/td> | 476K |
| 代理商： | HY27UF161G2M-TIP |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁當前第47頁第48頁
Rev 0.7 / Apr. 2005
47
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Application Note
1. Power-on/ off Sequence
After power is on, the device starts
an internal
circuit initialization when the power supply voltage reaches a specific
level. The device shows its internal initialization status with the Ready/Busy signal if initialization is on progress. While
the device is initializing, the device sets internal registeries to default value and generates internal biases to operate
circuits. Typically the initializing time of 20us is required.
Power-off or power failure before write/erase operation is complete will cause a loss of data. The WP# signal helps
user to protect not only the data integrity but also device circuitry from being damaged at power-on/off by keeping
WP# at VIL during power-on/off.
For the device to operate stably, it is highly recommended to operate the device as shown Fig.33.
:3
9
,/
9
,+
9'HYLFH9
9'HYLFH9
:(
9
XV
5HDG\
%XV\
,QLWLDOL]HDWSRZHURQ
9
9&&
2WKHUV
3LQV
,/
Figure 34: Power-on/ off sequence
相關PDF資料 |
PDF描述 |
|---|---|
| HY27UF161G2M-TIS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF161G2M-TMB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF161G2M-TMP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF161G2M-TMS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF161G2M-TP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY27UF161G2M-TIS | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF161G2M-TMB | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF161G2M-TMP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF161G2M-TMS | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF161G2M-TP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。