參數(shù)資料
型號: HY27UF161G2M-TIP
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述: 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
封裝: 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
文件頁數(shù): 23/48頁
文件大?。?/td> 476K
代理商: HY27UF161G2M-TIP
Rev 0.7 / Apr. 2005
23
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Description
IO7
IO6
IO5-4
IO3
IO2
IO1-0
Page Size
(Without Spare Area)
1K
2K
Reserved
Reserved
0 0
0 1
1 0
1 1
Spare Area Size
(Byte / 512Byte)
8
16
0
1
Serial Access Time
Standard (50ns)
Fast (30ns)
0
1
Block Size
(Without Spare Area)
64K
128K
256K
Reserved
0 0
0 1
1 0
1 1
Organization
X8
X16
0
1
Not Used
Reserved
Table 16: 4th Byte of Device Identifier Description
Part Number
Voltage
Bus Width
Manufacture
Code
Device
Code
3rd Code
4th Code
HY27UF081G2M
3.3V
x8
ADh
F1h
Don’t care
15h
HY27UF161G2M
3.3V
x16
ADh
C1h
Don’t care
55h
HY27SF081G2M
1.8V
x8
ADh
A1h
Don’t care
15h
HY27SF161G2M
1.8V
x16
ADh
ADh
Don’t care
55h
Table 17: Read ID
相關(guān)PDF資料
PDF描述
HY27UF161G2M-TIS 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-TMB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-TMP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-TMS 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-TP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27UF161G2M-TIS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-TMB 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-TMP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-TMS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-TP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory