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參數(shù)資料
| 型號(hào)： | HY27UF081G2M-TCP |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| 中文描述： | 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 |
| 文件頁(yè)數(shù)： | 47/48頁(yè) |
| 文件大小： | 476K |
| 代理商： | HY27UF081G2M-TCP |
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Rev 0.7 / Apr. 2005
47
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Application Note
1. Power-on/ off Sequence
After power is on, the device starts
an internal
circuit initialization when the power supply voltage reaches a specific
level. The device shows its internal initialization status with the Ready/Busy signal if initialization is on progress. While
the device is initializing, the device sets internal registeries to default value and generates internal biases to operate
circuits. Typically the initializing time of 20us is required.
Power-off or power failure before write/erase operation is complete will cause a loss of data. The WP# signal helps
user to protect not only the data integrity but also device circuitry from being damaged at power-on/off by keeping
WP# at VIL during power-on/off.
For the device to operate stably, it is highly recommended to operate the device as shown Fig.33.
:3
9
,/
9
,+
9'HYLFH9
9'HYLFH9
:(
9
XV
5HDG\
%XV\
,QLWLDOL]HDWSRZHURQ
9
9&&
2WKHUV
3LQV
,/
Figure 34: Power-on/ off sequence
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27UF081G2M-TCS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TEB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TEP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TES | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TIB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27UF081G2M-TCS | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TEB | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TEP | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TES | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TIB | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
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